| PART |
Description |
Maker |
| CRF-22010-001 CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
|
CREE POWER
|
| S6301 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S6203 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S2301-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2305-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4103 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4003 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| NE67483B NE67400 |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| S6201 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| CFY25-P CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23 |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Low Noise / General Purpose MESFET 伊雷尔X波段功率低噪通用场效应晶体管
|
TRIQUINT SEMICONDUCTOR INC
INFINEON[Infineon Technologies AG]
|
| APT2X21DC120J |
ISOTOP? SiC Diode Power Module
ISOTOP垄莽 SiC Diode Power Module
|
Microsemi Corporation
|
| MGF1951A-01 MGF1951A 1951A |
Medium Power Microwave MESFET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
